Statistical Modeling of Device Characteristics with Systematic Variability
نویسنده
چکیده
The variabilities of device characteristics are usually regarded as a normal distribution. If we consider the variabilities over the whole wafer, however, they cannot be expressed as a normal distribution due to the existence of global systematic component. We propose a statistical model, characterizing the global systematic component according to the distance from the center of the wafer, which can express the variabilities over the whole wafer statistically. key words: MOSFET, variability, systematic, stochastic
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تاریخ انتشار 2001